دیتاشیت PSMN9R0-30LL,115
مشخصات دیتاشیت
نام دیتاشیت |
PSMN9R0-30LL
|
حجم فایل |
489.466
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
16
|
مشخصات
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Manufacturer:
NXP USA Inc.
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Obsolete
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
30V
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Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
9mOhm @ 5A, 10V
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Vgs(th) (Max) @ Id:
2.15V @ 1mA
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Gate Charge (Qg) (Max) @ Vgs:
20.6nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
1193pF @ 15V
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FET Feature:
-
-
Power Dissipation (Max):
50W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
8-DFN3333 (3.3x3.3)
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Package / Case:
8-VDFN Exposed Pad
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Base Part Number:
PSMN9
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detail:
N-Channel 30V 21A (Tc) 50W (Tc) Surface Mount 8-DFN3333 (3.3x3.3)